2SC1318A 0.5 a, 80 v npn plastic encapsulated transistor elektronische bauelemente 19-jan-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? collector output capacitance cob=11 pf (typ), 20 pf (max) classification of h fe(1) product-rank 2SC1318A-q 2SC1318A-r 2SC1318A-s range 85~170 120~240 170~340 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 80 v collector to emitter voltage v ceo 70 v emitter to base voltage v ebo 5 v collector current - continuous i c 0.5 a collector power dissipation p c 750 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 80 - - v i c = 10 a, i e =0 collector to emitter breakdown voltage v (br)ceo 70 - - v i c = 2ma, i b =0 emitter to base br eakdown voltage v (br)ebo 5 - - v i e = 10 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb = 20v, i e =0 dc current gain h fe(1) 85 - 340 v ce = 10v, i c = 0.15a h fe(2) 40 - - v ce = 10v, i c = 0.5a collector to emitter saturation voltage v ce(sat) - - 0.6 v i c = 300ma, i b = 30ma base to emitter voltage v be(sat) - - 1.5 v i c = 300ma, i b = 30ma transition frequency f t - 120 - mhz v ce = 10v, i c = 50ma, f=200mhz collector output capacitance c ob - 11 20 pf v cb = 10v, i e =0, f=1mhz to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g1.27 typ. h1.10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j ? emitte r ? collector ? base
2SC1318A 0.5 a, 80 v npn plastic encapsulated transistor elektronische bauelemente 19-jan-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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